sm6t series www.vishay.com vishay general semiconductor revision: 13-dec-13 1 document number: 88385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional devices use ca suffix (e.g. sm6t12ca). electrical characteristics apply in both directions. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-direct ional and bi-directional ? 600 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? low inductance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. mechanical data case: do-214aa (smbj) ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-compliant and commercial grade base p/nhe3 - rohs-compliant and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 cla ss 2 whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional ty pes the band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. (2) mounted on 0.2" x 0.2" (5.0 mm x 5. 0 mm) copper pads to each terminal primary characteristics v wm 5.80 v to 188 v v br uni-directional 6.8 v to 220 v v br bi-directional 6.8 v to 220 v p ppm 600 w p d 5.0 w i fsm (uni-directional only) 100 a t j max. 150 c polarity uni-directional, bi-directional package do-214aa (smbj) do-214aa (smbj) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation wi th a 10/1000 s waveform (1)(2) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on in finite heatsink at t a = 50 c p d 5.0 w peak forward surge current 10 ms single half sine-wave uni -directional only (2) i fsm 100 a operating junction and storage temperature range t j , t stg - 65 to + 150 c
sm6t series www.vishay.com vishay general semiconductor revision: 13-dec-13 2 document number: 88385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) for bi-directional devices add suffix ?ca? (2) v br measured after i t applied for 300 s square wave pulse (3) for bi-polar devices with v r = 10 v or under, the i t limit is doubled note (1) mounted on minimum recommended pad layout note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) type (1) device marking code breakdown voltage v br at i t (2) (v) test current i t (ma) stand-off voltage v wm (v) leakage current i rm at v rm (a) clamping voltage v c at i ppm 10/1000 s clamping voltage v c at i pp 8/20 s ? t max. 10 -4 /c uni bi min. max. (v) (a) (v) (a) sm6t6v8a ke7 ke7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 sm6t7v5a kk7 ak7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 sm6t10a kt7 at7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 sm6t12a kx7 ax7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 sm6t15a lg7 lg7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 sm6t18a lm7 bm7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 sm6t22a lt7 bt7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 sm6t24a lv7 lv7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 sm6t27a lx7 bx7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 sm6t30a me7 ce7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 sm6t33a mg7 mg7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8 sm6t36a mk7 ck7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 sm6t39a mm7 cm7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 sm6t68a ng7 ng7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 sm6t100a nv7 nv7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 sm6t150a pk7 pk7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 sm6t200a pr7 pr7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 sm6t220a pr8 pr8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient air (1) r ? ja 100 c/ w typical thermal resistance, junction to lead r ? jl 20 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode sm6t10a-e3/52 0.096 52 750 7" diam eter plastic tape and reel sm6t10a-e3/5b 0.096 5b 3200 13" diam eter plastic tape and reel sm6t10ahe3/52 (1) 0.096 52 750 7" diameter plastic tape and reel sm6t10ahe3/5b (1) 0.096 5b 3200 13" diameter plastic tape and reel
sm6t series www.vishay.com vishay general semiconductor revision: 13-dec-13 3 document number: 88385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance fig. 5 - typical transient thermal impedance fig. 6 - maximum non-repetitive peak forward surge current 0.1 1 10 100 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 6000 10 1 100 200 uni-directional bi-directional c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m 0.1 1.0 10 100 0.001 0.01 0.1 10 1 100 1000 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 200 100 10 1 100 8.3 ms single half sine- w a v e uni-directional only nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
sm6t series www.vishay.com vishay general semiconductor revision: 13-dec-13 4 document number: 88385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band do-214aa (smbj) 0.106 max (2.69 max) 0.050 mi n (1.27 mi n ) 0.220 ref 0.083 mi n (2.10 mi n ) mounting pad layout
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